Thermoelectric properties of nanoporous Ge

نویسندگان

  • Joo-Hyoung Lee
  • Jeffrey C. Grossman
چکیده

We computed thermoelectric properties of nanoporous Ge !np-Ge" with aligned pores along the #001$ direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant reduction in the lattice thermal conductivity of np-Ge leads to a 30-fold increase in the thermoelectric figure-of-merit !ZT" compared to that of bulk. Detailed comparisons with the recently proposed np-Si show that although the maximum ZT !ZTmax" of Ge is nine times larger than that of Si in the bulk phase, ZTmax of np-Ge is twice as large as that of np-Si due to the similarity in lattice thermal conductivity of the two np systems. Moreover, ZTmax is found to occur at a carrier concentration two orders of magnitude lower than that for with np-Si due to the dissimilarities in their electronic structure. © 2009 American Institute of Physics. #DOI: 10.1063/1.3159813$

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تاریخ انتشار 2009